Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-09-20

著者

• MATSUSHITA Koichi

  Department of Electrical and Information Engineering, Faculty of Engineering, Yamagata University

• IGARASHI Seiji

  Department of Pediatric Dentistry, School of Dentistry, Health Sciences University of Hokkaido

• Shibata Yukio

  Department Of Electronic Engineering Tohoku University

• HARIU Takashi

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• SUGIYAMA Yoshihiro

  Department of Electronic Engineering, Tohoku University

• Shibata Yukio

  Department Of Computer Science Faculty Of Engineering Gunma University

• Matsushita Koichi

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• Hariu Takashi

  Department Of Electrical Engineering Tohoku University

• Igarashi Seiji

  Department Of Electronic Engineering Tohoku University

• Sugiyama Yoshihiro

  Department Of Electronic Engineering Tohoku University

• Sugiyama Yoshihiro

  Department Of Bacteriology Kinki University School Of Medicine

• SHIBATA Yukio

  Department of Electronic Engineering, Tohoku University

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