Low-Temperature Surface Cleaning of Si and Successive Plasma-Assisted Epitaxial Growth of GaAs
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概要
- 論文の詳細を見る
Removal of native oxide on Si at a temperature as low as 500℃ and the successive epitaxial growth of GaAs have been achieved in hydrogen plasma. Simultaneous supply of Ga or As during hydrogen plasma treatment has been found to be more effective in getting reproducible and successful epitaxial growth than simple hydrogen-plasma cleaning.
- 社団法人応用物理学会の論文
- 1987-10-20
著者
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Ono Shoichi
Research Institute Of Electrical Communication Tohoku University
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Gao Qing
Department Of Electronic Engineering Tohoku University
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Hariu Takashi
Department Of Electrical Engineering Tohoku University
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ONO Shoichi
Research Institute of Electrical Communication, Tohoku University
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- Generalized Expression for Small Signal Impedance of Solid State Single Injection Diodes Including Space Charge Effects
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- Low Temperature Epitaxial Growth of Highly-Conductive ZnSe Layers in Mixed Plasma of Hydrogen and Hydrogen Chloride
- Optimum Pumping Geometry of Optically-Pumped Submillimeter Wave Lasers
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- The Effect of Hydrogen Plasma on the Low Temperature Epitaxial Growth of InSb
- Diffusion Effect on Negative Resistance in Semiconductor Diodes with Deep Impurity Levels