Plasma-Assisted Epitaxial Growth of P-Type ZnSe in Nitrogen-Based Plasma
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Ono Shoichi
Research Institute Of Electrical Communication Tohoku University
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HARIU Takashi
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Hariu T
Department Of Electronic Engineering Tohoku University
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Hariu Takashi
Department Of Electrical Engineering Tohoku University
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HAMADA Tomoji
Department of Electronic Engineering, Tohoku University
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Hamada T
Okayama Univ. Okayama Jpn
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- Low Temperature Thermal Nitridation of GaAs Surfaces
- Schottky Contact Characterization of Sputter-Etched Surface of GaAs and Its Recovery by Annealing
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- Bulk Limited Conduction in Metal-Insulator-Metal Systems
- P-n Junction Capacitance Thermometers
- Generalized Expression for Small Signal Impedance of Solid State Single Injection Diodes Including Space Charge Effects
- Plasma-Assisted Deposition of GaAs Thin Films : III-3: III-V COMPOUND SOLAR CELLS
- Generalized Small Signal Admittances of Solid State Diodes
- Transient Response Simulation of Semiconductor Diodes with Deep Impurity Levels
- Plasma-Assisted Epitaxial Growth of P-Type ZnSe in Nitrogen-Based Plasma
- Low Temperature Epitaxial Growth of Highly-Conductive ZnSe Layers in Mixed Plasma of Hydrogen and Hydrogen Chloride
- Optimum Pumping Geometry of Optically-Pumped Submillimeter Wave Lasers
- Low-Temperature Surface Cleaning of Si and Successive Plasma-Assisted Epitaxial Growth of GaAs
- The Effect of Hydrogen Plasma on the Low Temperature Epitaxial Growth of InSb
- Diffusion Effect on Negative Resistance in Semiconductor Diodes with Deep Impurity Levels