The Effect of Hydrogen Plasma on the Low Temperature Epitaxial Growth of InSb
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概要
- 論文の詳細を見る
InSb layers have been epitaxially grown on (100) semi-insulating GaAs by plasma-assisted epitaxy (PAE) in hydrogen plasma at a temperature as low as 270℃. It was found that higher rf power should be applied to plasma for the epitaxial growth of InSb layers at lower temperatures than at higher temperatures, and when higher rf power is applied, the optimum Sb/In supply ratio to obtain PAE-InSb with electronic property comparable to those growrn at higher temperatures, shifts to lower value.
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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YAMAUCHI Satoshi
Department of Internal Medicine (II) , KANSAI MEDICAL UNIVERSITY
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Hariu Takashi
Department Of Electrical Engineering Tohoku University
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Ohshima Tomoyuki
Department Of Electrical Engineering Tohoku University
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Yamauchi Satoshi
Department Of Electrical Engineering Tohoku University
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Yamauchi Satoshi
Department Of Agricultural Chemistry Faculty Of Agriculture Kyushu University
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