Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2006-05-25

著者

• Matsuo Yuriko

  Division Of Fundamental Mechanics Research Institute For Applied Mechanics Kyushu University

• Murakami H

  Institute For Molecular Science

• Kumagai Y

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• TAKEMOTO Kikurou

  Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and

• MURAKAMI Hisashi

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• IWAMOTO Tomoyuki

  Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and

• KANGAWA Yoshihiro

  Division of Fundamental Mechanics, Research Institute for Applied Mechanics, Kyushu University

• KUMAGAI Yoshinao

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• KOUKITU Akinori

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• Kumagai Y

  Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T

• Kumagai Y

  Hitachi Ltd. Ibaraki Jpn

• Kangawa Yoshihiro

  Department Of Applied Chemistry Tokyo University Of Agriculture And Technology

• Murakami H

  Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T

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