Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

• The direct growth of a GaN epitaxial layer on a Si(111) substrate by metalorganic vapor phase epitaxy (MOVPE) was performed using a low-temperature (LT)-GaN buffer layer with no Al-containing intermediate layer (e.g., AlN or AlGaN). No deterioration in the Si surface caused by the reaction between Si and Ga vapor was observed. However, when there were Ga droplets on the surface, Ga and Si formed a Ga–Si alloy, which caused the generation of numerous holes on the surface by melt-back etching at high temperatures. In addition, it was revealed that the coverage of the LT-GaN buffer layer on Si was strongly affected by the hydrogen (H2) partial pressure in the carrier gas. Using nitrogen (N2) carrier gas, a complete coverage of the LT-GaN buffer layer could be achieved directly over the Si surface. These features can be explained by the facts that the Si surface is partially terminated by hydrogen atoms and the coverage of hydrogen on Si surface depends on H2 partial pressure.

• 2006-05-25

著者

• Matsuo Yuriko

  Division Of Fundamental Mechanics Research Institute For Applied Mechanics Kyushu University

• TAKEMOTO Kikurou

  Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and

• MURAKAMI Hisashi

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• IWAMOTO Tomoyuki

  Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and

• KANGAWA Yoshihiro

  Division of Fundamental Mechanics, Research Institute for Applied Mechanics, Kyushu University

• KUMAGAI Yoshinao

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• KOUKITU Akinori

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• Matsuo Yuriko

  Division of Fundamental Mechanics, Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan

• Koukitu Akinori

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

• Kangawa Yoshihiro

  Division of Fundamental Mechanics, Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan

• Iwamoto Tomoyuki

  Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

関連論文

• Growth of MnGeP_2 Thin Films by Molecular Beam Epitaxy
• Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
• Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
• Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
• In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
• Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
• Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
• The relationship between halitosis, living habits and conditions
• Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
• Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
• 3PT190 弾性ネットワークモデルを利用したβ_2アドレナリン受容体のアンサンブルドッキング(日本生物物理学会第50回年会(2012年度))
• Study of the Decomposition Processes of (0001)AlN in a Hydrogen Atmosphere
• Template-free Synthesis of Highly Porous Carbon Nitride, nanoC_3N_4

もっと見る 閉じる

スポンサーリンク