Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates

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概要

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• Vapor-phase epitaxy of Fe-doped thick GaN layers was performed using GaCl, NH3 and FeCl2 as source gases on (0001) sapphire and (111)A GaAs substrates with the aim of preparing semi-insulating (SI) GaN substrates. On sapphire, the resistivity of the GaN layer increased with increasing FeCl2 input partial pressure. A 12-μm-thick SI GaN layer showing a resistivity of $3.0\times 10^{9}$ $\Omega$ cm at room temperature was successfully grown by compensating for background donors. In contrast, the resistivity of the GaN layers grown on the GaAs substrate remained low (on the order of $10^{-2}$ $\Omega$ cm) even though the same growth conditions were used as on the sapphire substrate. Secondary ion mass spectroscopy (SIMS) measurements suggested that the presence of As vapor-species caused by the degradation of the substrate hindered Fe from becoming incorporated into GaN.

• 2005-08-10

著者

• TAKEMOTO Kikurou

  Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and

• MURAKAMI Hisashi

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• KUMAGAI Yoshinao

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• KOUKITU Akinori

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science

• Koukitu Akinori

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

• Murakami Hisashi

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

• Kumagai Yoshinao

  Strategic Research Initiative for Future Nano-Science and Technology, Institute of Symbiotic Science and Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

関連論文

• Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
• Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN
• In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
• Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
• Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
• Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
• Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates
• Study of the Decomposition Processes of (0001)AlN in a Hydrogen Atmosphere

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