Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-10-15

著者

• Kobayashi Y

  Tokai Univ. Kanagawa Jpn

• Kobayashi Y

  Ntt Basic Research Lab. Kanagawa

• Kobayashi Y

  Matsushita Electric Industrial Co. Ltd. Kyoto Jpn

• KOBAYASHI Naoki

  NTT Basic Research Laboratories

• AKASAKA Tetsuya

  NTT Basic Research Laboratories, NTT Corporation

• KOBAYASHI Yasuyuki

  NTT Basic Research Laboratories, NTT Corporation

• Kangawa Yoshihiro

  Department Of Applied Chemistry Tokyo University Of Agriculture And Technology

• Kobayashi N

  The University Of Electro-communications Department Of Applied Physics And Chemistry

• Kobayashi Y

  Department Of Nuclear Engineering Graduate School Of Engineering

• Kobayashi Yasuyuki

  Ntt Basic Research Laboratories Ntt Corporation

• Akasaka T

  Univ. Tsukuba Ibaraki Jpn

• Akasaka Tetsuya

  Ntt Basic Research Laboratories Ntt Corporation

• Kobayashi Yasuyuki

  Ntt Basic Research Laboratories

• Kobayashi Naoki

  Ntt Basic Laboratories Ntt Corporation

• Akasaka Tetsuya

  NTT Basic Research Laboratories

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