Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 2013-03-25

著者

• AKASAKA Tetsuya

  NTT Basic Research Laboratories, NTT Corporation

• Yamamoto Hideki

  Ntt Basic Research Laboratories

• Akasaka Tetsuya

  NTT Basic Research Laboratories

• LIN Chia-Hung

  NTT Basic Research Laboratories, NTT Corporation

関連論文

• Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
• Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
• Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
• Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
• Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
• Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
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• Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
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• GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• A New Superconducting Cuprate Prepared by Low-Temperature Thin-Film Synthesis in a Ba -Cu -O System
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• InGaN quantum wells with small potential fluctuation
• BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy
• A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
• Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
• Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr_La_CuO_2 Thin Films
• Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
• A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
• Nucleus and Spiral Growth of N-face GaN(000\bar{1}) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
• $ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications
• Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
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• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
• 30aCA-13 Fermi surface reconstruction driven by orbital rearrangement in cuprates

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