AKASAKA Tetsuya | NTT Basic Research Laboratories, NTT Corporation
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概要
関連著者
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AKASAKA Tetsuya
NTT Basic Research Laboratories, NTT Corporation
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Akasaka Tetsuya
NTT Basic Research Laboratories
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Akasaka Tetsuya
Ntt Basic Research Laboratories Ntt Corporation
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KOBAYASHI Yasuyuki
NTT Basic Research Laboratories, NTT Corporation
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Naoki
NTT Basic Research Laboratories
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Kobayashi N
The University Of Electro-communications Department Of Applied Physics And Chemistry
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories Ntt Corporation
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Akasaka T
Univ. Tsukuba Ibaraki Jpn
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Makimoto Toshiki
Ntt Corp. Kanagawa Jpn
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Kobayashi Naoki
Ntt Basic Laboratories Ntt Corporation
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Nishida T
Ntt Basic Res. Lab. Kanagawa Jpn
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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Kasu Makoto
Ntt Basic Research Laboratories
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Nishida T
Nara Inst. Sci. And Technol. Nara Jpn
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Nishida T
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Nishida T
Ntt Basic Research Laboratories
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Nishida Toshio
Ntt Basic Research Laboratories Physical Science Laboratory
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Nishida Toshio
Ntt Basic Research Laboratories
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Kasu Makoto
Ntt Corp. Kanagawa Jpn
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Kobayashi Y
Tokai Univ. Kanagawa Jpn
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Kobayashi Y
Ntt Basic Research Lab. Kanagawa
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Kobayashi Y
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Kobayashi Y
Department Of Nuclear Engineering Graduate School Of Engineering
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ANDO Seigo
NTT Basic Research Laboratories
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Yamamoto Hideki
Ntt Basic Research Laboratories
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Gotoh Hideki
Ntt Basic Research Laboratories
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Nakano Hidetoshi
Ntt Basic Research Laboratories Ntt Corporation
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Nakano Hidetoshi
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corp.
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Ando S
Ntt Basic Research Laboratories
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Nakano Hidetoshi
Ntt Basic Research Laboratories
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HIBINO Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories
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Gotoh Hideki
Ntt Basic Research Laboratories Ntt Corporation
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Hibino Hiroki
Ntt Basic Research Laboratories Ntt Corporation
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TANIYASU Yoshitaka
NTT Basic Research Laboratories, NTT Corporation
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MATSUMOTO Nobuo
Shonan Institute of Technology
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NAKAMURA Tomohiro
Shonan Institute of Technology
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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NAKANO Hidetoshi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corp.
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TAWARA Takehiko
NTT Basic Research Laboratories, NTT Corporation
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Tawara Takehiko
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Tawara Takehiko
Ntt Basic Res. Lab. Kanagawa Jpn
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LIN Chia-Hung
NTT Basic Research Laboratories, NTT Corporation
著作論文
- Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
- Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- InGaN quantum wells with small potential fluctuation
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy