KOBAYASHI Yasuyuki | NTT Basic Research Laboratories, NTT Corporation

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概要

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著作論文

Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
Chemical Structure of As-Stabilized Surface during GaAs Metalorganic Vapor Phase Epitaxy Studied by Surface Photo-Absorption
Surface Morphology and Carbon Incorporation for Hexagonal GaN/(111)B GaAs Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine and Trimethylgallium
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

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