Nucleus and Spiral Growth Mechanisms of GaN Studied by Using Selective-Area Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 2010-07-25
著者
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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Kasu Makoto
Ntt Corp. Kanagawa Jpn
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Kasu Makoto
Ntt Basic Research Laboratories
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AKASAKA Tetsuya
NTT Basic Research Laboratories, NTT Corporation
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KOBAYASHI Yasuyuki
NTT Basic Research Laboratories, NTT Corporation
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories Ntt Corporation
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Akasaka Tetsuya
Ntt Basic Research Laboratories Ntt Corporation
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories
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Akasaka Tetsuya
NTT Basic Research Laboratories
関連論文
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- Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
- Formation of Solid Solution of Al_Si_xN (0
- Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- In-Situ STM Observation of GaAs Surfaces after Nitridation
- Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light
- Surface Stoichiometry and Evolution of Crystal Facet during Selective Area MOVPE
- Surface Flattening of GaN by Selective Area Metalorganic Vapor Phase Epitaxy
- Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
- GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
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- In-Situ Control of Strained Heterostructure Growth
- Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy
- In Situ Interface Control of Pseudomorphic InAs/InP Quantum Well Structure Growth by Surface Photo-Absorption
- As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption
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- Growth of Boron Nitride on 6H-SiC Substrate by Flow-rate Modulation Epitaxy
- InGaN quantum wells with small potential fluctuation
- High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
- BGaN Micro-Islands as Novel Buffers for GaN Hetero-Epitaxy
- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone Adsorbates
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
- Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al_2O_3 Overlayer and its Electric Properties
- Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Arsenic-Doped n-Type Diamond Grown by Microwave-Assisted Plasma Chemical Vapor Deposition
- Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)
- Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
- Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
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- Nucleus and Spiral Growth of N-face GaN(000\bar{1}) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
- $ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications
- Origin of Schottky Barrier Modification by Hydrogen on Diamond
- Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
- Structural and Optical Properties of AlGaInN/GaN Grown by MOVPE
- Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy