Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Kasu Makoto
Ntt Basic Research Laboratories Ntt Corporation
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Kasu Makoto
Ntt Basic Research Laboratories
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TANIYASU Yoshitaka
NTT Basic Research Laboratories, NTT Corporation
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KIDO Takatoshi
Shonan Institute of Technology
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MATSUMOTO Nobuo
Shonan Institute of Technology
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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