KIDO Takatoshi | Shonan Institute of Technology

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概要

• Kido Takatoshiの詳細を見る
• 同名の論文著者
• Shonan Institute of Technologyの論文著者

関連著者

• KIDO Takatoshi

  Shonan Institute of Technology

• MATSUMOTO Nobuo

  Shonan Institute of Technology

• Kasu Makoto

  Ntt Basic Research Laboratories

• Taniyasu Yoshitaka

  Ntt Basic Research Laboratories Ntt Corporation

• Makimoto Toshiki

  Ntt Basic Laboratories Ntt Corporation

• Kumakura Kazuhide

  Ntt Basic Laboratories Ntt Corporation

• KUMAKURA Kazuhide

  NTT Basic Research Laboratories, NTT Corporation

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kasu Makoto

  Ntt Basic Research Laboratories Ntt Corporation

• TANIYASU Yoshitaka

  NTT Basic Research Laboratories, NTT Corporation

• Kumakura Kazuhide

  Ntt Basic Research Laboratories Ntt Corporation

• Kasu Makoto

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• YAMAUCHI Yoshiharu

  NTT Basic Research Laboratories, NTT Corporation

• YAMAUCHI Yoshiharu

  NEL TechnoSupport

• Yamauchi Yoshiharu

  Ntt Basic Research Laboratories

• Makimoto Toshiki

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Yamauchi Yoshiharu

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Taniyasu Yoshitaka

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Matsumoto Nobuo

  Shonan Institute of Technology, 1-1-25 Nishi-Kaigan Tsujido, Fujisawa, Kanagawa 251-8511, Japan

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著作論文

• Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

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