Kumakura Kazuhide | Ntt Basic Laboratories Ntt Corporation

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著作論文

Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
Ohmic Contact to p-GaN Using a Strained Layer and Its Thermal Stability
Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
High-Temperature Operation Over 500℃ of Pnp AlGaN/GaN HBTs
Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors with Low-Base-Resistance (
Increased Electrical Activity of Mg-Acceptors in Al_xGa_N/GaN Superlattices
High-Temperature Characteristics of AlxGa1-xN-Based Vertical Conducting Diodes
High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN $ p$–$i$–$n$ Vertical Conducting Diode on $n$-SiC Substrate
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Influence of Lattice Constants of GaN and InGaN on npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
$ p$-InGaN/$n$-GaN Vertical Conducting Diodes on $n^{+}$-SiC Substrate for High Power Electronic Device Applications
Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
Ohmic Contact to $p$-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability
Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance ($

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