High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Nishikawa Atsushi
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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