Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-07-15

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• Kasu Makoto

  Ntt Basic Research Laboratories Ntt Corporation

• Kubovic M

  Univ. Ulm Ulm Deu

• Kubovic Michal

  Department Of Electron Devices And Circuits University Of Ulm

• ALEKSOV Aleksandar

  Department of Electron Devices and Circuits , University of Ulm

• KOHN Erhard

  Department of Electron Devices and Circuits , University of Ulm

• TEOFILOV Nikolai

  Department of Semiconductor Physics, University of Ulm

• SAUER Rolf

  Department of Semiconductor Physics, University of Ulm

• Sauer Rolf

  Department Of Semiconductor Physics University Of Ulm

• Teofilov Nikolai

  Department Of Semiconductor Physics University Of Ulm

関連論文

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
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• ダイヤモンドMESFETの高周波特性
• Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
• RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
• Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicirual Substrate Grown by Metalorganic Chemical Vapor Deposition
• Step-Free GaN Hexagons Grown by Selective-Area Metalorganic Vapor Phase Epitaxy
• Formation of Solid Solution of Al_Si_xN (0
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
• Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere
• Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
• ダイヤモンドMESFETのマイクロ波帯増幅特性(化合物混晶半導体デバイス・材料(含むSiGe,ワイドギャップ半導体),一般)
• ダイヤモンドMESFETのマイクロ波帯増幅特性(化合物混晶半導体デバイス・材料(含むSiGe,ワイドギャップ半導体),一般)
• ダイヤモンドMESFETのマイクロ波帯増幅特性(化合物混晶半導体デバイス・材料(含むSiGe,ワイドギャップ半導体),一般)
• Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
• Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
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• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
• Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
• Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
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• Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
• High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
• GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
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• Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
• Annealing Properties of Si-Atomic-Layer-Doped GaAs
• Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
• p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
• Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
• Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor

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