Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
On the basis of the thin barrier surface (TSB) model, the mechanism of gate current leakage under reverse gate–source bias in nitride-based heterostructure field effect transistors (HFETs) and metal–insulator–semiconductor (MIS) HFETs with an ultrathin (1 nm/0.5 nm) Al2O3/Si3N4 bilayer has been investigated. The simulations show that the electron tunneling through the Schottky barrier is the dominant mechanism for gate current in conventional HFETs due to the high density of donor like defects on the surface. An Al2O3/Si3N4 bilayer insulator can substantially reduce the donor like surface defect density and then significantly suppress the gate current leakage in nitrides-base MIS-HFET devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
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WATANABE Noriyuki
NTT Photonics Laboratories
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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ENOKI Takotomo
NTT Photonics Laboratories, NTT Corporation
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Wang Chengxin
Ntt Photonics Laboratories Ntt Corporation
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Yokoyama Haruki
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Wang Chengxin
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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