Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-05-25

著者

• ASADA Masahiro

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• Asada Masahiro

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• YOKOYAMA Haruki

  NTT Photonics Laboratories, NTT Corporation

• SUGIYAMA Hiroki

  NTT Photonics Laboratories

• Asada Masahiro

  Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology

• SUZUKI Safumi

  Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology

• Suzuki Safumi

  Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology

• Suzuki Safumi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• TERANISHI Atsushi

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology

• HINATA Kensuke

  Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology

• Hinata Kensuke

  Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology

• Yokoyama Haruki

  Ntt Photonics Lab. Kanagawa Jpn

• Teranishi Atsushi

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

• Sugiyama Hiroki

  Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology

関連論文

• Epitaxial Growth and Electrical Characteristics of CaF_2/Si/CaF_2 Resonant Tunneling Diode Structures Grown on Si(111)1°-off Substrate
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
• Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
• Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
• Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes : Semiconductors
• Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors with Metal Gate
• Proposal and Analysis of a Traveling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas
• Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
• Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
• Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
• Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure
• Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
• Invited review paper: Resonant tunneling diodes for sub-terahertz and terahertz oscillators
• Experimental and theoretical investigation of the dependence of oscillation characteristics on structure of integrated slot antennas in sub-terahertz and terahertz oscillating resonant tunneling diodes
• Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors(Semiconductors)
• Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
• High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
• Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
• Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode
• Quantum-Well Photoemission Media for Terabit/inch^2 Ultrahigh-Density Optical Storage Employing Probe-Collection Tunneling-Electron Luminescence(Optics and Quantum Electronics)
• High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
• Nonlinear Terahertz Gain Estimated from Multiphoton-Assisted Tunneling in Resonant Tunneling Diodes : Surfaces, Interfaces, and Films
• Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures : Semiconductors
• Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
• Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition (Special Issue : Solid State Devices and Materials (2))
• Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna
• In_Ga_As Quantum Point Contacts Utilizing Wrap-Gate Geometry
• Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
• Proposal and Analysis of a Semiconductor Klystron Device Using Two-Dimensional Electron Gas for Terahertz Amplification and Oscillation
• Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells
• Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
• In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
• Beating Analysis of Shubnikov de Haas Oscillation in In0.53Ga0.47As Double Quantum Well toward Spin Filter Applications
• Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
• Beating Analysis of Shubnikov de Haas Oscillation in In_Ga_As Double Quantum Well toward Spin Filter Applications
• Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes
• Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
• High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
• Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
• Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
• Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy
• Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
• Experimental and Theoretical Characteristics of Sub-Terahertz and Terahertz Oscillations of Resonant Tunneling Diodes Integrated with Slot Antennas
• Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
• Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate
• Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
• Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas
• Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates
• Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diodes with Stacked-Layer Slot Antennas
• Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
• Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas
• Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas
• Experimental and Theoretical Investigation of the Dependence of Oscillation Characteristics on Structure of Integrated Slot Antennas in Sub-terahertz and Terahertz Oscillating Resonant Tunneling Diodes
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
• Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
• Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
• A parallel-to-serial converter based on a differentially-operated optically clocked transistor array

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