Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
-
ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
-
SUZUKI Safumi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
関連論文
- Epitaxial Growth and Electrical Characteristics of CaF_2/Si/CaF_2 Resonant Tunneling Diode Structures Grown on Si(111)1°-off Substrate
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
- Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes : Semiconductors
- Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors with Metal Gate
- Proposal and Analysis of a Traveling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure
- Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
- Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors(Semiconductors)
- Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
- Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
- Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay