ASADA Masahiro | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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概要
- ASADA Masahiroの詳細を見る
- 同名の論文著者
- Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technologyの論文著者
関連著者
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ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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SUZUKI Safumi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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YOKOYAMA Haruki
NTT Photonics Laboratories, NTT Corporation
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Teranishi Atsushi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sugiyama Hiroki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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TERANISHI Atsushi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Yokoyama Haruki
Ntt Photonics Laboratories Ntt Corporation
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浅田 雅洋
東京工業大学大学院総合理工学研究科
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TSUTSUI Masafumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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URAYAMA Kenta
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Urayama Kenta
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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SAWADA Kiyohito
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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HINATA Kensuke
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Hinata Kensuke
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Sawada Kiyohito
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Tsutsui Masafumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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ORIHASHI Naoyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Orihashi Naoyuki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Shizuno Kaoru
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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渡辺 正裕
東京工業大学大学院総合理工学研究科
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WATANABE Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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IKETANI Yoshifumi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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SATO Hiroyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Watanabe M
Nec Corp. Ibaraki Jpn
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Iketani Yoshifumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Aoki Satoshi
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Asada Masahiro
Interdisciplinary Greduate School Of Science And Engineering Tokyo Institute Of Technology
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Nagai T
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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SATO Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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IGUCHI Tsuyoshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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SHIRAISHI Masato
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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KISHIMOTO Naomichi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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NAGAI Toshiaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Shiraishi Masato
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Kishimoto Naomichi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Iguchi Tsuyoshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Shiraishi Masato
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sato Hiroyuki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SHIZUNO Kaoru
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Suzuki Safumi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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SUGIYAMA Hiroki
NTT Photonics Laboratories, NTT Corporation
著作論文
- Epitaxial Growth and Electrical Characteristics of CaF_2/Si/CaF_2 Resonant Tunneling Diode Structures Grown on Si(111)1°-off Substrate
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
- Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes : Semiconductors
- Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors with Metal Gate
- Proposal and Analysis of a Traveling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure
- Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
- Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors(Semiconductors)
- Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
- Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
- Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay