Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes(THz Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)
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概要
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Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18GHz is obtained experimentally for a device with the central oscillation frequency of 470GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.
- 社団法人電子情報通信学会の論文
- 2006-07-01
著者
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ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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SUZUKI Safumi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ORIHASHI Naoyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Orihashi Naoyuki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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