Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas
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概要
- 論文の詳細を見る
Frequency change with bias voltage was observed in the third harmonic oscillation at about 1 THz in GaInAs/AlAs double-barrier resonant tunneling diodes integrated with slot antennas at room temperature. The oscillation frequency changed from about 0.96 to 1.02 THz. Results of theoretical analysis were compared with those of measurements using a simple equivalent circuit with an additional capacitance due to bias-voltage-dependent tunneling time of electrons, and a reasonable agreement was obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-05-15
著者
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Orihashi Naoyuki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Orihashi Naoyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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