Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
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概要
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We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and selfconsistent calculation. Theoretical calculation showed good drivability (750 μA/μm) of this device with t_<OX>=1nm and t_<Si>=5nm. As a preliminary experiment, devices with a Si channel thickness of 8nm, 20nm or 30nm and a vertical channel length of 55nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of S nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.
- 社団法人電子情報通信学会の論文
- 2002-05-01
著者
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ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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TSUTSUI Masafumi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Nagai T
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Tsutsui Masafumi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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NAGAI Toshiaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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