Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas
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概要
- 論文の詳細を見る
A fundamental oscillation of up to 915 GHz was observed at room temperature in small-area InGaAs/AlAs resonant tunneling diodes (RTDs) with planar slot antennas. The dependence of the oscillation frequency on the RTD mesa area was also shown. Although the output power was small (a few tens of nanowatts) in this study owing to the relatively low available current density (difference in current density between the peak and the valley: ${\sim}3$ mA/μm2) and the small mesa area (${\sim}0.63$ μm2), it was expected that the output power can be increased by a high available current density.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-02-25
著者
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Teranishi Atsushi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Shiraishi Masato
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Safumi Suzuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Masahiro Asada
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro, Tokyo 152-8552, Japan
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Haruki Yokoyama
NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Atsushi Teranishi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Hiroki Sugiyama
NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Masato Shiraishi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
関連論文
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