Teranishi Atsushi | Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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概要
- TERANISHI Atsushiの詳細を見る
- 同名の論文著者
- Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technologyの論文著者
関連著者
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Teranishi Atsushi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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TERANISHI Atsushi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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YOKOYAMA Haruki
NTT Photonics Laboratories, NTT Corporation
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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SUZUKI Safumi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Sugiyama Hiroki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Yokoyama Haruki
Ntt Photonics Laboratories Ntt Corporation
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SAWADA Kiyohito
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Sawada Kiyohito
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Shizuno Kaoru
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Masahiro Asada
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro, Tokyo 152-8552, Japan
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HINATA Kensuke
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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KISHIMOTO Naomichi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Hinata Kensuke
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Kishimoto Naomichi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Shiraishi Masato
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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SHIZUNO Kaoru
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Suzuki Safumi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Safumi Suzuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro, Tokyo 152-8552, Japan
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Safumi Suzuki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Haruki Yokoyama
NTT Photonics Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Haruki Yokoyama
NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Atsushi Teranishi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro, Tokyo 152-8552, Japan
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Atsushi Teranishi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Hiroki Sugiyama
NTT Photonics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Masato Shiraishi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Hiroki Sugiyama
NTT Photonics Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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SUGIYAMA Hiroki
NTT Photonics Laboratories, NTT Corporation
著作論文
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
- Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy
- Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas