Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni–InP Schottky Barrier Diode
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概要
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We report on the measurement of oscillation frequency and spectral linewidth of sub-terahertz GaInAs/AlAs resonant tunneling diode (RTD) oscillators by harmonic heterodyne detection using a Ni–InP Schottky barrier diode integrated with a bow-tie antenna. For an RTD oscillating at 550 GHz and having an output power ${\leq}1$ μW, the measured spectral linewidth was at most 10 MHz; this value is in consistent with that obtained theoretically. A narrow linewidth is expected for a device having high output power and $Q$-factor. We also accurately measured the frequency change with changing bias voltage for the RTD oscillator; this result is useful for frequency modulation and can be applied to the phase-locked loop system.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-02-25
著者
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Shiraishi Masato
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Safumi Suzuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro, Tokyo 152-8552, Japan
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Masahiro Asada
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro, Tokyo 152-8552, Japan
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Satoshi Aoki
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Ryo Yokoyama
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Karashima Koichi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Yokoyama Ryo
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Koichi Karashima
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Meguro, Tokyo 152-8552, Japan
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Karashima Koichi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
関連論文
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode
- High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Extremely High Peak Current Densities of over $1\times 10^{6}$ A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy
- Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni–InP Schottky Barrier Diode
- Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas