Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-12-10
著者
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ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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SUZUKI Safumi
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Technology Tokyo Institute Of Technology
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Suzuki Safumi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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ORIHASHI Naoyuki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Orihashi Naoyuki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
関連論文
- Epitaxial Growth and Electrical Characteristics of CaF_2/Si/CaF_2 Resonant Tunneling Diode Structures Grown on Si(111)1°-off Substrate
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation
- Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes : Semiconductors
- Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors with Metal Gate
- Proposal and Analysis of a Traveling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (-200μW) Using Offset-Fed Slot Antenna and High Current Density
- Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode
- Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure
- Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
- Invited review paper: Resonant tunneling diodes for sub-terahertz and terahertz oscillators
- Experimental and theoretical investigation of the dependence of oscillation characteristics on structure of integrated slot antennas in sub-terahertz and terahertz oscillating resonant tunneling diodes
- Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors(Semiconductors)
- Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
- Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
- Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
- Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode
- High Output Power (-400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Nonlinear Terahertz Gain Estimated from Multiphoton-Assisted Tunneling in Resonant Tunneling Diodes : Surfaces, Interfaces, and Films
- Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures : Semiconductors
- Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Proposal and Analysis of a Semiconductor Klystron Device Using Two-Dimensional Electron Gas for Terahertz Amplification and Oscillation
- Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
- Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
- Experimental and Theoretical Characteristics of Sub-Terahertz and Terahertz Oscillations of Resonant Tunneling Diodes Integrated with Slot Antennas
- Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
- Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-Subband Quantum Cascade Structure on Si substrate
- Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas
- Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diodes with Stacked-Layer Slot Antennas
- Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas
- Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas
- Experimental and Theoretical Investigation of the Dependence of Oscillation Characteristics on Structure of Integrated Slot Antennas in Sub-terahertz and Terahertz Oscillating Resonant Tunneling Diodes
- Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes