Proposal and Analysis of a Semiconductor Klystron Device Using Two-Dimensional Electron Gas for Terahertz Amplification and Oscillation
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概要
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An amplifier device with two-dimensional electron gas, which has the possibility of operation in the THz range, is proposed and analyzed. In the operation principle, electrons traversing the input port emit and absorb THz photons, resulting in the splitting of the electron energy levels, and then, the beat of these splitting electron waves produces charge density modulation which emits an amplified output power at the output port. This operation principle is equivalent to that of the klystron tube in the low-frequency classical limit. Transconductance and power gain are analyzed quantum mechanically, taking into account the influence of electron scattering and electron energy distribution. Calculated results show that the transconductance has a peak in the sub-THz and THz ranges. An oscillator using this device integrated with a coplanar line and a slot antenna is proposed, and the possibility of THz oscillation is shown by analyzing the oscillation conditions.
- 2004-09-15
著者
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Asada Masahiro
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Asada Masahiro
Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-Ku, Tokyo 152-8552, Japan
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