Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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ASADA Masahiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Asada Masahiro
Interdisciplinary Greduate School Of Science And Engineering Tokyo Institute Of Technology
関連論文
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- Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure
- Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers
- Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors(Semiconductors)
- Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET
- Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range
- Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes
- Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers
- Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes
- Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay