Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
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概要
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We studied the thermal diffusion of Si atoms in delta-doped n-type InAlAs grown by metal-organic vapor-phase epitaxy using secondary ion mass spectroscopy (SIMS). In the case of high sheet concentration of around $1\times 10^{13}$ cm-2, significant broadening of the Si profile was observed after postgrowth annealing in arsine ambient at ${>}590$°C. In contrast, broadening of the profile was suppressed at the concentration of about $3\times 10^{12}$ cm-2. Diffusivity of Si atom in delta-doped InAlAs was estimated from the SIMS profiles.
- 2004-02-15
著者
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Sugiyama Hiroki
NTT Photonics Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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