High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-11-30

著者

• Kobayashi T

  Ntt Corp. Kanagawa Jpn

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• HIROKI Masanobu

  NTT Photonics Laboratories, NTT Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• Maeda Narihiko

  Institute For Solid State Physics University Of Tokyo

• Hiroki Masanobu

  Ntt Photonics Laboratories Ntt Corporation

• Enoki Takatomo

  Ntt Photonics Laboratories

• Kobayashi Takashi

  Department Of Physical Electronics Tokyo Institute Of Technology

• WANG Chengxin

  NTT Photonics Laboratories, NTT Corporation

• Wang Chengxin

  Ntt Photonics Laboratories Ntt Corporation

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