High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures

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概要

• 論文の詳細を見る
• 2012-08-25

著者

• SASAKI Satoshi

  NTT Basic Research Laboratories, NTT Corporation

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• Hiroki Masanobu

  Ntt Photonics Laboratories Ntt Corporation

• Harada Yuichi

  Ntt Basic Research Laboratories

• Sasaki Satoshi

  Ntt Basic Research Laboratories

• HARADA Yuichi

  NTT Basic Research Laboratories, NTT Corporation

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