Oxidation Patterning of GaAs by Nanoelectrode Lithography
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概要
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Nanoelectrode lithography, which transfers patterns from a nanoelectrode to a target via an electrochemical reaction, is employed for patterning GaAs. Gallium oxide and arsenic oxide are produced by the anodic oxidation of GaAs. A-400-nm pitch line and space (L/S) pattern and a closely packed hexagonal pattern with a 500 nm pitch are successfully transferred. For the 400-nm-pitch L/S pattern, a patterned area of $6\times 8$ mm2 is obtained with a reaction time of 30 s. The fabricated pattern can be directly used as an etching mask. Structures with depths of approximately 70 and 10 nm are obtained by wet and dry etchings, respectively. In addition, it is confirmed that multiple patterning is also possible on a GaAs substrate.
- 2005-02-15
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