High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures

スポンサーリンク

概要

• 論文の詳細を見る

• Recessed-gate AlGaN/GaN enhancement-mode (E-mode) heterostructure field-effect transistors (HFETs) with enhanced-barrier structures were fabricated, and their high-temperature characteristics were examined. Owing to enhanced-barrier structures, where a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, excellent E-mode operation with threshold voltage (V_{\text{th}}) higher than +3 V and drain current density (I_{\text{d}}) higher than 600 mA/mm was obtained at room temperature. Interestingly, I_{\text{d}} did not decrease much at high temperatures, i.e., I_{\text{d}} decreased from 610 to 590 mA upon a temperature raise from RT to 300 °C. Open-gate devices with and without recessed-gate structures were fabricated and their two-terminal characteristics were comparatively examined, revealing that the observed peculiar characteristics are ascribed to recessed-gate structures. A model for explaining the observed high-temperature characteristics is proposed.

• 2013-08-25

著者

• Maeda Narihiko

  Ntt Photonics Laboratories Ntt Corporation

• Hiroki Masanobu

  Ntt Photonics Laboratories Ntt Corporation

• Harada Yuichi

  Ntt Basic Research Laboratories

• Sasaki Satoshi

  Ntt Basic Research Laboratories

関連論文

• Long Spin Relaxation Time Observed in a Lateral Quantum Dot
• Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
• Oxidation Patterning of GaAs by Nanoelectrode Lithography
• Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
• Coherent Cooper-Pair Tunneling in a Superconducting Single Electron Transistor
• RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
• High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
• Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
• In_Ga_As Quantum Point Contacts Utilizing Wrap-Gate Geometry
• Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer
• In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
• High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
• High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
• Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures (Special Issue : Recent Advances in Nitride Semiconductors)
• The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)
• Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene

もっと見る 閉じる

スポンサーリンク