Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
-
Tarucha Seigo
Ntt Basic Research Laboratories
-
SASAKI Satoshi
NTT Basic Research Laboratories, NTT Corporation
-
HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
-
Hirayama Yoshiro
Ntt Basic Research Laboratories
-
Sasaki Satoshi
Ntt Basic Research Laboratories
関連論文
- Oxidation Patterning of GaAs by Nanoelectrode Lithography
- Electrostatic coupling between two double-quantum dots studies by resonant tunneling current
- Long Spin Relaxation Time Observed in a Lateral Quantum Dot
- Difference in Self-Assembling Morphology of Peptide Nanorings
- Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
- Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)
- Unpinning of the Fermi level at clean (111)A surfaces of heavily Si-doped In_Ga_As thin films epitaxially grown on InP substrates
- 22aXF-13 LT-STM study of the surface Fermi level position of MBE-grown In_Ga_As on (001) and (111)A oriented InP substrates
- High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
- Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
- Technologies for Artificial Semiconductor Atoms
- Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
- Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
- Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
- Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Optical Properties of Dynamically-Modulated Dots and Wires Formed by Surface Acoustic Waves
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- Application of InAs Freestanding Membranes to Electromechanical Systems
- Application of InAs Free-Standing Membranes for Electromechanical Systems
- Back-Gated Point Contact
- Back-Gated Point Contact
- Quantum Point Contacts in a Density-Tunable Two-Dimensional Electron Gas
- 28aYB-6 LT-STS study of two-dimensional quantization in In_Ga_As/In_Al_As heterostructures epitaxially grown on lattice-matched InP(111)A substrates
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- Multiple Gated InAs Dot Ensembles
- Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
- Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
- High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
- Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
- Effect of Structure on Transport Characteristics of Ballistic One-Dimensional Channel
- Defects in Ga^+ Jon Implanted GaAs-AlAs MQW Structures
- Near Room Temperature CW Operation of 660 nun Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs Superlattices
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Quantized Conductance in InGaAs Point Contacts at High Temperatures
- Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
- High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
- 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
- Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
- Internal Magnetic Focusing in an Array of Open Quantum Dots
- The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)
- Regulated Single Electron to Single Photon Conversion in a Constant-Current-Driven pn Microjunction
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
- Coherence Time of Nuclear Spins in GaAs Quantum Well Probed by Submicron-Scale All-Electrical Nuclear Magnetic Resonance Device
- Oxidation Patterning of GaAs by Nanoelectrode Lithography
- Transmission Type RF Single Electron Transistor Operation of a Semiconductor Quantum Dot
- Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
- n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
- Drastic Improvement in Surface Flatness Properties by Using GaAs (111) A Substrates in Molecular Beam Epitaxy
- Gate-Controlled Lateral Diodes Formed in Undoped Heterostructure
- Transport Properties of Parallel Multiple Ballistic Point Contacts
- Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate
- Application of Novel Double-Schottky-Junction AlGaAs/InAs/GaAs Heterostructures for Thermionic-Emitter Hot-Electron Transistors
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
- Improvement in the Electrical Properties of GaAs/InAs/GaAs Structures through the Use of (111)A Substrates
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices
- Mechanism of Ga Implantation-Induced Intermixing of GaAs-AlGaAs Material
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- Giant Magneto-Piezoresistance and Internal Friction in a Two-Dimensional Electron System
- High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
- Real-Time Observation of Charge States and Energy Relaxation in a Double Quantum Dot
- InAs/AlGaSb Piezoresistive Cantilever for Sub-Angstrom Scale Displacement Detection
- A Double Quantum Dot as an Artificial Two-Level System
- Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy
- Imaging of Local Charge Density in an InAs/GaAs Two-Dimensional Heterostructure by Scanning Tunneling Microscopy
- Difference in Self-Assembling Morphology of Peptide Nanorings
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
- High-Mobility Two-Dimensional Electron Gas in an Undoped Heterostructure : Mobility Enhancement after Illumination
- High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures (Special Issue : Recent Advances in Nitride Semiconductors)
- The Kondo Effect Enhanced by State Degeneracy(Kondo Effect-40 Years after the Discovery)