Multiple Gated InAs Dot Ensembles

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Tarucha Seigo

  Ntt Basic Research Laboratories

• Austing Guy

  Ntt Basic Research Laboratories

• EAVES Laurence

  Department of Physics,University of Nottingham

• Main Peter

  School Of Physics And Astronomy University Of Nottingham

• Eaves L

  School Of Physics And Astronomy University Of Nottingham

• Eaves Laurence

  Department Of Physics University Of Nottingham

• Henini M

  School Of Physics And Astronomy University Of Nottingham

• Henini Mohamed

  Department of Physics,University of Nottingham

• STODDART Simon

  Department of Physics, University of Nottingham

• MAIN Peter

  Department of Physics, University of Nottingham

• Stoddart Simon

  Department Of Physics University Of Nottingham

• Henini Mohamed

  Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK

関連論文

• Multiple Photon Assisted Tunneling between Two Coupled Quantum Dots ( Quantum Dot Structures)
• High Magnetic Field Study of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor (RHET)
• High-Mobility Inverted Modulation-Doped GaAs/AlGaAs Heterostructures
• Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
• Gate Performance in Resonant Tunneling Single Electron Transistor (Special Issue on Technology Challenges for Single Electron Devices)
• Technologies for Artificial Semiconductor Atoms
• Vertical Single Electron Transistors With Separate Gates ( Quantum Dot Structures)
• Atomic-Like Properties of Semiconductor Quantum Dots ( Quantum Dot Structures)
• GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
• GaAs/AlGaAs/InGaAs Vertical Triple Barrier Single Electron Transistors
• Sub-Micron Vertical AlGaAs/GaAs Resornarnt Tunneling Single Electron Transistor
• Quantized Conductance Observed in Quantum Wires 2 to 10 μm Long
• High Magnetic Field Studies of Tunnelling Through X-Valley-Related Silicon Donor States in GaAs/AlAs Heterostructures
• Weak Antilocalization in Si δ-Doped In_xGa_As Systems
• Optical and Resonant Tunnelling Spectroscopy of Self-Assembled Quantum Dot Systems
• Multiple Gated InAs Dot Ensembles
• Magnetotunnelling and Photoluminescence Spectroscopy of Self-Assembled InAs Quantum Dots ( Quantum Dot Structures)
• Electrical Pump and Probe Measurements of a Quantum Dot in the Coulomb Blockade Regime
• Transport Properties of Modulation-Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation
• 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
• Quantized Conductance in InGaAs Point Contacts at High Temperatures
• Resonant Tunneling Properties of Single Electron Transistors with a Novel Double-Gate Geometry
• High-Mobility Quantum Wires Fabricated by Ga Focused Ion Beam Shallow Implantation
• Optical Properties and Laser Applications of (InGa)As/(AlGa)As Self-Assembled Quantum Dots
• 25p-YG-4 Internal Magnetic Focusing in an Array of Ballistic Cavities
• Hot Electron Ballistic Transport in Small Four-Terminal n-AlGaAs/InGaAs/GaAs Structures
• Internal Magnetic Focusing in an Array of Open Quantum Dots
• Regulated Single Electron to Single Photon Conversion in a Constant-Current-Driven pn Microjunction
• The Role of Emitter States in Magnetotunneling through Double-Barrier Resonant-Tunneling Diodes at High Magnetic Fields
• A Double Quantum Dot as an Artificial Two-Level System
• Magnetotunnelling and Photoluminescence Spectroscopy of Self-Assembled InAs Quantum Dots
• Optical Properties and Laser Applications of (InGa)As/(AlGa)As Self-Assembled Quantum Dots

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