High Magnetic Field Study of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor (RHET)

概要

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Base and collector currents have been studied in an InAlAs/InGaAs resonant-tunneling hotelectron transistor at 4.2 K in pulsed magnetic fields up to 42.5 T. Base and collector currentshave been found to depend strongly on the field and its orientation. For fields perpendicularto the ctmrrent direction, the base/emitter current ratio increases initially with an approximateparabolic dependence and then saturates at high fields. Frona this magnetic field dependence,scattering processes in the Inlays base region are discussed. Using a classical model for electrontransport under a magnetic field perpendicular to the current, values for the mean free path andscattering time in the base are obtained that agree well with theoretical values for electron-electron scattering. It is shown that the znagnetic field dependence of the collector ctrrrentat high perpendicular fields can be explained by single barrier tunneling. A model in WKBapproximation allows to deternuine the electron energy. Moreover, by extrapolating the highfield dependence of the collector current to zero field, a ratio for ballistic transport through thebase is derived.
社団法人日本物理学会の論文
1996-04-15