Magnetotunnelling and Photoluminescence Spectroscopy of Self-Assembled InAs Quantum Dots

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概要

• 論文の詳細を見る

• Self-assembled InAs quantum dots (QDs) in AlAs and GaAs matrices are investigated by tunnelling and optical spectroscopy. Tunnelling through an individual QD in the AlAs barrier of a n-i-n single-barrier device is used to probe the properties of both the emitter two-dimensional electron gas (2DEG) and the QD. The Landau fan of the 2DEG is mapped at magnetic field parallel to the tunnelling current, $B\Vert I$, as well as the spin splitting in the QD at B⊥I. An electron g-factor in the QD is determined as $\mid g\mid =1.2\pm 0.5$. In the photoluminescence spectrum of InAs QDs in B up to 23 T, a strong anisotropy in the diamagnetic shift is found. The spatial extent of the carrier wave function in the dot is estimated as 60 Å. Under hydrostatic pressure up to 8 kbar, the pressure coefficient for the dot emission line is (9.1±0.2) meV/kbar, about 20% smaller than for the Γ-point bandgap in bulk GaAs.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1997-06-30

著者

• Carmona Humberto

  Department Of Physics University Of Nottingham

• Eaves Laurence

  Department Of Physics University Of Nottingham

• Henini Mohamed

  Department of Physics,University of Nottingham

• MAIN Peter

  Department of Physics, University of Nottingham

• IHN Thomas

  Department of Physics, University of Nottingham

• THORNTON Andrew

  Department of Physics, University of Nottingham

• MAUDE Duncan

  LCMI-CNRS

• PORTAL Jean-Claude

  LCMI-CNRS

• Itskevich Igor

  Department Of Physics University Of Nottingham:institute Of Solid State Physics Russian Academy Of S

• Thornton Andrew

  Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK

• Maude Duncan

  LCMI-CNRS, 38042 Grenoble, France and INSA-CNRS, 31077 Toulouse, France

• Portal Jean-Claude

  LCMI-CNRS, 38042 Grenoble, France and INSA-CNRS, 31077 Toulouse, France

• Itskevich Igor

  Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK

• Henini Mohamed

  Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK

• Main Peter

  Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD, UK

関連論文

• High Magnetic Field Study of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor (RHET)
• High Magnetic Field Studies of Tunnelling Through X-Valley-Related Silicon Donor States in GaAs/AlAs Heterostructures
• Multiple Gated InAs Dot Ensembles
• Magnetotunnelling and Photoluminescence Spectroscopy of Self-Assembled InAs Quantum Dots ( Quantum Dot Structures)
• The Role of Emitter States in Magnetotunneling through Double-Barrier Resonant-Tunneling Diodes at High Magnetic Fields
• Magnetotunnelling and Photoluminescence Spectroscopy of Self-Assembled InAs Quantum Dots

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