InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-30
著者
-
Mano Takaaki
Department Of Applied Chemistry The University Of Tokyo
-
Mano Takaaki
National Inst. Materials Sci. (nims) Ibaraki Jpn
-
KIDO Giyu
National Institute for Materials Science
-
IMANAKA Yasutaka
National Institute for Materials Science, Nanomaterials Laboratory
-
TAKAMASU Tadashi
National Institute for Materials Science, Nanomaterials Laboratory
-
OSHIMA Masaharu
Department of Engineering, University of Tokyo
-
TSUKAMOTO Shiro
The Anan National College of Technology
-
KOGUCHI Nobuyuki
National Institute for Materials Science
-
Takamasu T
National Inst. For Materials Sci. Ibaraki
-
Takamasu Tadashi
Nanomaterials Laboratory National Institute For Materials Science
-
Takamasu Tadashi
Institute For Solid State Physics University Of Tokyo
-
Takamasu Tadashi
National Institute For Materials Science
-
Takamasu Tadashi
Tsukuba Magnet Laboratory National Institute For Materials Science
-
Oshima M
Department Of Applied Chemistry The University Of Tokyo
-
Kido Giyu
National Research Institute For Metals
-
FUJIOKA Hiroshi
Department of Applied Chemistry, The University of Tokyo
-
WATANABE Katsuyuki
National Research Institute for Metals
-
TSUKAMOTO Shiro
National Research Institute for Metals
-
Watanabe Katsuyuki
National Research Institute For Metals : Department Of Material Science And Technology Science Unive
-
Watanabe K
Department Of Physics Tokyo University Of Science
-
Koguchi N
Sci. Univ. Tokyo Chiba Jpn
-
Mano Takaaki
National Inst. For Materials Sci. Ibaraki Jpn
-
Mano Toshimasa
Department Of Applied Chemistry The University Of Tokyo
-
Imanaka Yasutaka
National Institute For Materials Science Nanomaterials Laboratory
-
Imanaka Yasutaka
National Research Institute For Metals
-
Imanaka Yasutaka
National Institute For Materials Science
-
Tsukamoto S
The Anan National College Of Technology
-
Wakisaka K
Sanyo Electric Co. Ltd. Hirakata‐shi Jpn
-
Fujioka H
Univ. Tokyo Tokyo Jpn
-
WATANABE Ken-ichi
Institute for Nuclear Study, University of Tokyo
-
Fujioka Hiroshi
大日本製薬
-
Oshima Masaharu
Department Of Applied Chemistry Graduate School Of Engineering The University Of Tokyo
-
Fujioka Hiroshi
Department Of Applied Chemistry The University Of Tokyo
-
Takamasu Tadashi
Nanophysics Group Quantum Dot Research Center National Institute For Materials Science
-
Takamasu Tadashi
National Institute for Material Science, Tsukuba, Ibaraki 305-0047, Japan
-
OSHIMA Masaharu
Department of Applied Chemistry and JST-CREST, The University of Tokyo
関連論文
- 20pPSB-55 Electric field modulation of exciton recombination in GaAs quantum double rings
- Energy renormalization of exciton complexes in GaAs quantum dots
- Micro-patterned organic electroluminescent devices (Special issue: Molecular electronics and bioelectronics)
- Preparation of Tethered Palladium Catalysis Supported on Gold(111) and Its Surface Characterization by X-ray Photoelectron Spectroscopy (XPS)
- Optical and Magneto-Optical Studies on Electronic Structure of CeSb in the Magnetically Ordered States
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
- Magneto-Optical Absorption Spectra of Cu_2O in an Image Map with Five Structures at Higher Fields up to 25T
- Magneto-Optical Absorption Spectra of Cu_2O in an Image Map with Fine Structures at Higher Fields up to 25T
- Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
- Fabrication and Characterization of AlN/InN Heterostructures
- Effect of Magnetic Field on γ→α' Martensitic Transformation and Magnetization of α' and α' Iron-Nitrides
- Antiferromagnetic Domain Structure Imaging of Cleaved NiO(100) Surface Using Nonmagnetic Linear Dichroism at O K Edge : Essential Effect of Antiferromagnetic Crystal Distortion(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Prop
- Magnetic Domain Imaging of Ni Micro Ring and Micro Dot array by Photoelectron Emission Microscopy
- Global aphase Diagram of the Magnetic Field-Induced Organic Superconductors λ-(BETS)_2Fe_xGa_Cl_4
- Magneto-Thermodynamic Effects in Chemical Reactions(General Physics)
- Electronic Structure in the Magnetically Ordered States of CeSb Studied by Infrared Magneto-Optical Spectroscopy : Condensed Matter: Electronic Properties, etc.
- Higher-Order Multipolar Effects on Elastic Properties of PrNi_5(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Electronic Band Structure of Transparent Conductor : Nb-Doped Anatase TiO_2
- Temperature-Dependent Soft X-ray Photoemission and Absorption Studies of Charge Disproportionation in La_Sr_xFeO_3(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- 13pYC-12 Nonlithographic fabrication of antidotes in AlGaAs/GaAs heterostructure using nanoporous aluminum
- 20pHK-7 Tuning the fine interaction in semiconductor quantum dot : role of geometry
- Photon Correlation in GaAs Self-Assembled Quantum Dots
- Investigation of Hydrogenated Amorphous Silicon Germanium Fabricated under High Hydrogen Dilution and Low Deposition Temperature Conditions for Stable Solar Cells
- Neutron-Irradiation Effects on the Magnetic-Field-Induced Electronic Phase Transitions in Graphite
- Non-Ohmic Out-of-Plane Transport in a High-Magnetic-Field-Induced Phase of Graphite
- X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn-Zn Ferrite
- Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
- Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
- Fabrication of Self-Assembled GaAs/AlGaAs Quantum Dots by Low-Temperature Droplet Epitaxy
- InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
- Effect of Impurity at SiO_2/Si Interface on 2D Hole Gas
- Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si(100) Substrates
- The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN
- Spin State Analysis of Epitaxial Mn Compound Films Using High Resolution X-Ray Fluorescence
- Chemical States of Piled-up Phosphorus and Arsenic Atoms at the SiO2/Si Interface (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2))
- Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
- Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
- Giant Magnetotransport Phenomena in Filling-Controlled Kondo Lattice System : La_Sr_xMnO_3
- Reduced Phonon Scattering in an Asymmetric Triple Barrier Resonant-Tunneling Diode at High Magnetic Fields(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- High Magnetic Field Study of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor (RHET)
- Highly Reactive Organopalladium Catalyst Formed on Sulfur-Terminated GaAs(001)-(2 × 6) Surface
- Novel Palladium Catalyst Supported on GaAs(001) Passivated by Ammonium Sulfide
- Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface
- A Photoemission Study of Al and Au Overlayers on Se/GaAs(100)
- Selective, Maskless Growth of InSb on Selenium-Treated GaAs by Molecular Beam Epitaxy
- Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
- Se Segregation and Chemical Bonding in Pd/Se/GaAs
- Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)_O3 (111) Substrate by Metalorganic Chemical Vapor Deposition
- Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates : Suppression of Fine-Structure Splitting
- Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy
- Photoelectron Spectroscopy of EuBa_2Cu_3O_ Thin Film Surfaces Treated by an Electron Cyclotron Resonance Oxygen Ion Beam
- Water-Immersion-Induced Surface Reactiorns of EuBa_2Cu_3O_y Thin Films
- Surfaces and Interfaces of High-T_c Superconductors for Contact and Junction Formation Studied with Synchrotron Radiation Photoemisison Spectroscopy : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- Structure and Bonding at the CaF_2/GaAs(111) Interface : Surfaces, Interfaces and Films
- b initio Study on the Electronic States of Hydrogen Defects in Diamond Subsurfaces
- New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
- Ab Initio Study of Hydrogen Desorption from Diamond C(100) Surfaces
- A New Single-Layer Resist for 193-nm Lithography
- Study of Bi-level Resist System with Conductive Bottom Layer for EB Lithography
- A Novel Polymer for a 193-nm Resist
- Hydrophone Sensitivity of Porous Pb(Zr, Ti)O_3 Ceramics ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Combinatorial Fabrication Process for a-Si:H Thin Film Transistors : Instrumentation, Measurement, and Fabrication Technology
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
- Stoichiometry Study of S-Terminated GaAs(001)-(2×6)Surface with Synchrotron Radiation Photoelectron Spectoscopy
- Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
- Far-Infrared Properties of Bi_2Sr_2Ca_2Cu_3O_x in Pulsed High Magnetic Fields
- MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Anomalous Softening of Spin-Phonon Coupled Mode on CuGeO_3
- Spin-Phonon Coupled Modes in the Incommensurate Phase of CuGeO_3
- Throughput Measurement of a Multilayer-Coated Schwarzschild Objective Using Synchrotron Radiation
- Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
- Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition
- Spectro-Diffractometry for Chemical-State Analysis Based on In-Advance Simulations
- In-Advance Simulation and Chemical State Analysis by Spectro-Diffractometry
- Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
- Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition
- GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
- GaSb-Growth Study by Realtime Crystal-Growth Analysis Systemu Using Synchrotron Radiation Photoelectron Spectroscopy
- Photoemission and RHEED Studies of Bonding Properties at the CaF_2/GaAs(001) Interface
- Characteristics of Thick $m$-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers
- DNA Electromagnetophoresis under the Condition of Magnetic Fields Perpendicular to Electric Fields
- Standardization of Excitation Efficiency in Near-field Scanning Optical Microscopy
- Possibility of the Discrimination of Different Chemical States by Energy-Dispersive X-Ray Spectroscopy
- Solid Solubility Determination and Single Crystal Preparation of New Quaternary Solid Solution System of (Pb_Ge_x)(S_Se_z)
- Release Profiles of Recombinant Human Tumor Necrosis Factor from Ca^-Triggering Liposome in Vivo
- Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy
- New Quaternary Semiconductor Material Pb_Mn_xS_Se_y for Mid-IR Lasers : Semiconductors and Semiconductor Devices
- 2×6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunneling Microscopy
- 143. GABOB Action on Salt Discharge of Nerve Cells as well as on the Conditioned Reflex of Man.
- Sudden Suppression of Electron-Transmission Peaks in Finite-Biased Nanowires
- Modification of the Quantum Hall Effect by the Charge State of a Nearby Quantum Dot Layer(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Influence of Heat Treatment on Dissolution and Masking Degree of Bitter Taste for a Novel Fine Granule System
- Electron-Beam-Induced Deposition of Fe Nanoparticles and Thin Films on SrTiO3 Substrates
- Fabrication of GaNAs/AlGaAs Heterostructures with Large Band Offset Using Periodic Growth Interruption
- Spin-Phonon Coupled Modes in the Incommensurate Phase of CuGeO3
- New Quaternary Semiconductor Material Pb1-xCdxS1-ySey for Lattice-Matched Heterostructure Lasers with Emission Wavelength around 3 $\mu$m
- Authers' Reply