Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• Wirner Christoph

  Fujitsu Ltd.:nedo Industrial Technology Researcher

• Wirner Christoph

  Fujitsu Ltd.

• AWANO Yuji

  Fujitsu Ltd.

• FUTATSUGI Toshiro

  Fujitsu Laboratories Ltd.

• NAKAGAWA Tadashi

  Electrotechnical Laboratory

• BANDO Hiroshi

  Electrotechnical Laboratory

• MUTO Shunichi

  Hokkaido University, Faculty of Engineering

• MIURA Noboru

  Institute for Solid State Physics,University of Tokyo

• Bando Hiroshi

  Elecltrotechnical Laboratory

• FUTATSUJI Toshiro

  Fujitsu Laboratories

• OHNO Minoru

  Institute for Solid State Physics, University of Tokyo

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• NAKAGAWA Takahide

  RIKEN

• Awano Yuji

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Awano Y

  Fujitsu Ltd. Atsugi Jpn

• Awano Yuji

  Fujitsu Laboratories Ltd.

• Ohno Minoru

  Institute For Solid State Physics University Of Tokyo

• 武藤 真三

  山梨大学

• Nakagawa T

  Riken

• Miura N

  Univ. Tokyo Tokyo Jpn

• Miura Noboru

  Instilute For Solid State Physics University Of Tokyo

• Muto S

  Kek Ibaraki

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• Nakagawa Tadashi

  Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria

• Nakagawa T

  Matsushita Electric Industrial Co. Ltd. Kyoto Jpn

• Yokoyama N

  Fujitsu Laboratories Ltd.

• Bando Hiroshi

  First Department Of Internal Medicine School Of Medicine The University Of Tokushima

• Futatsugi T

  Fujitsu Laboratories Ltd.

• Bandou Hiroyuki

  Faculty Of Engineering Chiba University

• MIURA Nariaki

  Department of Physics, Graduate School of Science, University of Tokyo

• Yokoyama Naoki

  Institute For Nano Quantum Information Electronics The University Of Tokyo

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