Single-Electron Transistor with Ultra-High Coulomb Energy of 5000K Using Position Controlled Grown Carbon Nanotube as Channel
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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AWANO Yuji
Fujitsu Ltd.
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Yuji
Fujitsu Laboratory
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Matsumoto Kazuhiko
Advanced Industrial Science And Technology:tsukuba University:crest
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KUWAHARA Masashi
Advanced Optical Memory Group, National Institute for Advanced Interdisciplinary Research (NAIR)
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Kinoshita Seizo
Advanced Industrial Science & Technology Crest
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GOTOH Yoshitaka
Advanced Industrial Science & Technology, CREST
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KURACHI Kousuke
Advanced Industrial Science & Technology, CREST
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KAMIMURA Takahumi
Advanced Industrial Science & Technology, CREST
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MAEDA Masatoshi
Advanced Industrial Science & Technology, CREST
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SAKAMOTO Kazue
Advanced Industrial Science & Technology, CREST
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ATODA Nobuhumi
Advanced Industrial Science & Technology, CREST
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Atoda Nobuhumi
Advanced Industrial Science & Technology Crest
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Kamimura Takahumi
Advanced Industrial Science & Technology Crest
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Kurachi Kousuke
Advanced Industrial Science & Technology Crest
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Kuwahara Masashi
Advanced Industrial Science & Technology Crest
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Sakamoto Kazue
Advanced Industrial Science & Technology Crest
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Gotoh Yoshitaka
Advanced Industrial Science & Technology Crest
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Maeda M
Advanced Industrial Science & Technology Crest
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Matsumoto Kazuhiko
Advanced Industrial Science And Technology
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Kazuhiko Matsumoto
Advanced Industrial Science & Technology Crest
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Matsumoto Kazuhiko
Advanced Industrial Science & Technology, CREST
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