Carbon Nanotube Growth Technologies Using Tantalum Barrier Layer for Future ULSIs with Cu/Low-$k$ Interconnect Processes

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概要

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• We succeeded in developing carbon nanotube (CNT) vias specifically adapted for the copper interconnect process used in ultra large-scale integrated circuits. The CNTs were grown selectively on titanium films using Co catalyst films. The use of tantalum enabled CNTs to be grown on Cu lines and prevented any increase in the sheet resistance of the Cu lines. A Cu wire/CNT via/Cu wire structure was fabricated and low resistance of the via was demonstrated. In addition, tests showed that a high current density of about $10^{6}$ A/cm2 flowed into the CNT via for 125 hours.

• 2005-07-15

著者

• Awano Yuji

  Fujitsu Lab. Ltd. Kanagawa Jpn

• HORIBE Masahiro

  Fujitsu Limited

• KAWABATA Akio

  Fujitsu Limited

• Nihei Mizuhisa

  Fujitsu Laboratories Ltd.

• Kondo Daiyu

  Fujitsu Laboratories Ltd.

• Nihei Mizuhisa

  Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Awano Yuji

  Fujitsu Limited, 10-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Horibe Masahiro

  Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Kondo Daiyu

  Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Kawabata Akio

  Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

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