Carbon Nanotube Growth Technologies Using Tantalum Barrier Layer for Future ULSIs with Cu/Low-$k$ Interconnect Processes
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概要
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We succeeded in developing carbon nanotube (CNT) vias specifically adapted for the copper interconnect process used in ultra large-scale integrated circuits. The CNTs were grown selectively on titanium films using Co catalyst films. The use of tantalum enabled CNTs to be grown on Cu lines and prevented any increase in the sheet resistance of the Cu lines. A Cu wire/CNT via/Cu wire structure was fabricated and low resistance of the via was demonstrated. In addition, tests showed that a high current density of about $10^{6}$ A/cm2 flowed into the CNT via for 125 hours.
- 2005-07-15
著者
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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HORIBE Masahiro
Fujitsu Limited
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KAWABATA Akio
Fujitsu Limited
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Nihei Mizuhisa
Fujitsu Laboratories Ltd.
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Kondo Daiyu
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
Fujitsu Limited, 10-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Horibe Masahiro
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kondo Daiyu
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kawabata Akio
Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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