0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)

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概要

• 論文の詳細を見る

• This paper describes our new technology for creating a highly productive 0.1μm gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phase-shifting photo lithographic technique and sidewall deposition/etchig process to fabricate a 0.1μm gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10dB at 60GHz. We also fabricated a 60GHz band, four-stage low-noise amplifier MMIC and demonstrated its superior performance(Gain=27dB and NF=3.1dB @61GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.

• 社団法人電子情報通信学会の論文
• 1998-06-25

著者

• AWANO Yuji

  Fujitsu Ltd.

• Awano Yuji

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Awano Y

  Fujitsu Ltd. Atsugi Jpn

• Awano Yuji

  Fujitsu Laboratories Ltd.

• Saito T

  Fujitsu Laboratories Limited

• Saito Tamio

  Fujitsu Laboratories Ltd

• Harada N

  Fujitsu Ltd. Atsugi Jpn

• OHASHI Yoji

  Fujitsu Laboratories Ltd., Wireless Communication Systems Laboratories

• Oikawa Hideyuki

  FUJITSU LABORATORIES LTD.

• Hikosaka K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Saito Tamio

  Fujitsu Laboratories Limited

• Abe Masayuki

  Fujitsu Laboratories Ltd.

• Abe Masayuki

  Fujitsu Laboratories Limited

• HARADA Naoki

  Fujitsu Laboratories Ltd.

• Ohashi Yoji

  Fujitsu Laboratories Limited

• Oikawa H

  Nec Corp. Otsu‐shi Jpn

• Saito Takashi

  Second Department Of Oral And Maxillofacial Surgery Tsurumi University School Of Dental Medicine

• HARADA Naoki

  Fujitsu Laboratories Limited

• Oikawa Hideyuki

  Fujitsu Laboratories Limited

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