A New Type GaAlAs Monolithic Lensed LED : B-2: GaAs FET/LED AND DETECTOR

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Abe Masayuki

  Fujitsu Laboratories Ltd.

• Abe Masayuki

  Fujitsu Laboratories Limited

• HASEGAWA Osamu

  Fujitsu Limited

• KOMATSU Yasuaki

  Fujitsu Laboratories Ltd.

• TOYAMA Yoshikazu

  Fujitsu Laboratories Ltd.

• Komatsu Yasuaki

  Fujitsu Laboratories

関連論文

• A New Type GaAlAs Monolithic Lensed LED : B-2: GaAs FET/LED AND DETECTOR
• Modeling Thermal Effects for Simulation of Post Exposure Baking (PEB) Process in Positive Photoresist
• High Electron Mobility Transistor Logic
• Monte Carlo Simulation of Gunn Domain Formations
• Liquid Phase Epitaxial Growth of In_Ga_xP
• 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
• Two Step Photoconductive Decay of P-InSb by CO_2 Laser Light

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