Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
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概要
- 論文の詳細を見る
We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 $\Omega$/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of $2\times 10^{6}$ A/cm2, which is favorably compared with Cu vias.
- 2005-04-15
著者
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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HORIBE Masahiro
Fujitsu Limited
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Sato Shintaro
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Fujitsu Laboratories Ltd.
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Kondo Daiyu
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Fujitsu Limited, 10-1, Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Awano Yuji
Fujitsu Limited, 10-1, Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Kawabata Akiko
Fujitsu Limited, 10-1, Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Horibe Masahiro
Fujitsu Limited, 10-1, Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Sato Shintaro
Fujitsu Limited, 10-1, Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Kawabata Akio
Fujitsu Limited, 10-1, Morinosato-Wakamiya, Atsugi 243-0197, Japan
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