Carbon Nanotube Via Technologies for Advanced Interconnect Integration
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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Sato Shintaro
Mirai-selete
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Hyakushima Takashi
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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NIHEI Mizuhisa
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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AWANO Yuji
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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KAWABATA Akio
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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NOZUE Tatsuhiro
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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KONDO Daiyu
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SHIOYA Hiroki
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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IWAI Taisuke
Fujitsu Limited
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OHFUTI Mari
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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OHFUTI Mari
Fujitsu Limited
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Kondo Daiyu
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Kondo Daiyu
Department Of Physics Graduate School Of Science Tohoku University
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Nozue Tatsuhiro
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Ohfuti Mari
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Iwai Taisuke
Waseda Univ. School Of Sci & Eng.
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Iwai Taisuke
Fujitsu Laboratories Ltd.
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Sato Shintaro
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Kawabata Akio
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Kondo Daiyu
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Shioya Hiroki
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Nihei Mizuhisa
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Awano Yuji
Mirai-selete
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Nihei Mizuhisa
MIRAI-Selete
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Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Nozue Tatsuhiro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kawabata Akio
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Hyakushima Takashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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- Diameter-Controlled Growth of Multi-Walled Carbon Nanotubes by Hot-Filament Chemical Vapor Deposition with Ferritin as a Catalyst on a Silicon Substrate
- Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
- Influence of Growth Mode of Carbon Nanotubes on Physical Properties for Multiwalled Carbon Nanotube Films Grown by Catalystic Chemical Vapor Deposition
- Carbon nanotube technologies for future ULSI via interconnects
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- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Electrical Properties of Carbon Nanotubes Grown at a Low Temperature for Use as Interconnects
- Direction-Controlled Growth of Carbon Nanotubes
- Evaluation of Thermal Conductivity of a Multi-Walled Carbon Nanotube Using the $\Delta V_{\text{gs}}$ Method
- Chemical Modification of Multiwalled Carbon Nanotubes by Vacuum Ultraviolet Irradiation Dry Process
- Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
- First-Principles Study of Electronic Properties in Si Lattice Matched SiGeC Alloy with a Low C Concentration
- Patterned Carbon Nanotube Films Formed by Surface Decomposition of SiC Wafers
- Direct Diameter-Controlled Growth of Multiwall Carbon Nanotubes on Nickel-Silicide Layer
- Improvement in Electrical Properties of Carbon Nanotube Via Interconnects
- Diameter-Controlled Growth of Multi-Walled Carbon Nanotubes by Hot-Filament Chemical Vapor Deposition with Ferritin as a Catalyst on a Silicon Substrate