Sato Shintaro | Mirai-selete
スポンサーリンク
概要
関連著者
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Sato Shintaro
Mirai-selete
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Sato Shintaro
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
Fujitsu Laboratories Ltd.
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Awano Yuji
Mirai-selete
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Kondo Daiyu
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Kondo Daiyu
Department Of Physics Graduate School Of Science Tohoku University
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Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Sakai Tadashi
Mirai-selete
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Suzuki Mariko
Mirai-selete
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Katagiri Masayuki
Mirai-selete
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Sakuma Naoshi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Mariko
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakai Tadashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Katagiri Masayuki
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Hyakushima Takashi
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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NIHEI Mizuhisa
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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AWANO Yuji
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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Sakuma Naoshi
Mirai-selete
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Nihei Mizuhisa
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Hyakushima Takashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yamazaki Yuichi
Mirai-selete
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Nihei Mizuhisa
MIRAI-Selete
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Yamazaki Yuichi
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Awano Yuji
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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KATAGIRI Masayuki
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SAKUMA Naoshi
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SUZUKI Mariko
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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KONDO Daiyu
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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NIHEI Mizuhisa
Fujitsu Limited
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KONDO Daiyu
Fujitsu Limited
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SATO Shintaro
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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SATO Shintaro
Fujitsu Limited
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Iwai Taisuke
Waseda Univ. School Of Sci & Eng.
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Kawabata Akio
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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SAITO Tatsuro
Low-Power Electronics Association and Project (LEAP)
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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AWANO Yuji
Fujitsu Ltd.
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OHFUTI Mari
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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KAWABATA Akio
Fujitsu Limited
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OHFUTI Mari
Fujitsu Limited
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Ohfuti Mari
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Nihei Mizuhisa
Fujitsu Laboratories Ltd.
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Kondo Daiyu
Fujitsu Laboratories Ltd.
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WADA Makoto
Corporate Research and Development Center, Toshiba Corporation
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Nozue Tatsuhiro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kawabata Akio
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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YOKOYAMA Daisuke
Waseda Univ., School of Sci & Eng.
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ISHIMARU Kentaro
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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IWASAKI Takayuki
Waseda Univ., School of Sci & Eng.
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KAWARADA Hiroshi
Waseda Univ., School of Sci & Eng.
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KAWABATA Akio
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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NOZUE Tatsuhiro
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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KONDO Daiyu
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SHIOYA Hiroki
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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IWAI Taisuke
Fujitsu Limited
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KAWABATA Akio
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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HORIBE Masahiro
Fujitsu Limited
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YOKOYAMA Naoki
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Soga Ikuo
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Nozue Tatsuhiro
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Yamaguchi Yoshitaka
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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HARADA Naoki
Fujitsu Laboratories Ltd.
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Iwai Taisuke
Fujitsu Laboratories Ltd.
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NORIMATSU Masaaki
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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IWAI Taisuke
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Sato Motonobu
Fujitsu Laboratories Ltd.
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YAGI Katsunori
Fujitsu Laboratories Ltd.
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MATSUNAGA Noriaki
Corporate Research and Development Center, Toshiba Corporation
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Kondo Daiyu
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Shioya Hiroki
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Ishimaru Kentaro
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Norimatsu Masaaki
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Matsunaga Noriaki
Corporate Research And Development Center Toshiba Corporation
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Yokoyama Daisuke
Waseda Univ. School Of Sci & Eng.
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Yokoyama Naoki
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Kawarada Hiroshi
Waseda Univ. School Of Sci & Eng.
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Nihei Mizuhisa
MIRAI-Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Nihei Mizuhisa
MIRAI--Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kitamura Masayuki
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kajita Akihiro
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kitamura Masayuki
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sakuma Naoshi
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakuma Naoshi
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Motonobu
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
MIRAI-Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Mariko
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Mariko
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kajita Akihiro
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yamazaki Yuichi
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Shintaro
MIRAI-Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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HARADA Naoki
Fujitsu Laboratories Limited
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Sakai Tadashi
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Motonobu
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sato Shintaro
MIRAI--Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
著作論文
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Electrical properties of carbon nanotubes grown at a low temperature by radical chemical vapor deposition for future LSI interconnects
- Carbon Nanotube Via Technologies for Advanced Interconnect Integration
- Direction-controlled growth of carbon nanotubes (Selected topics in Applied Physics (6) Advances in carbon nanotube applications)
- Diameter-Controlled Growth of Multi-Walled Carbon Nanotubes by Hot-Filament Chemical Vapor Deposition with Ferritin as a Catalyst on a Silicon Substrate
- Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
- Carbon nanotube technologies for future ULSI via interconnects
- CNT-FETs with High Modulated Drain Current utilizing Size-classified Fe Particles as a Catalyst
- Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
- Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition
- High-Quality Carbon Nanotube Growth at Low Temperature by Pulse-Excited Remote Plasma Chemical Vapor Deposition
- Self-organization of Novel Carbon Composite Structure : Graphene Multi-Layers Combined Perpendicularly with Aligned Carbon Nanotubes
- High-Current Reliability of Carbon Nanotube Via Interconnects
- Low-Temperature Growth of Multiwalled Carbon Nanotubes by Surface-Wave Plasma-Enhanced Chemical Vapor Deposition Using Catalyst Nanoparticles
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Improvement in Electrical Properties of Carbon Nanotube Via Interconnects