SAITO Tatsuro | Low-Power Electronics Association and Project (LEAP)
スポンサーリンク
概要
関連著者
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SAITO Tatsuro
Low-Power Electronics Association and Project (LEAP)
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Sakai Tadashi
Mirai-selete
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Suzuki Mariko
Mirai-selete
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Sakuma Naoshi
Mirai-selete
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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Sato Shintaro
Mirai-selete
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KATAGIRI Masayuki
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SAKUMA Naoshi
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SUZUKI Mariko
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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NIHEI Mizuhisa
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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AWANO Yuji
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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Sato Shintaro
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Yamazaki Yuichi
Mirai-selete
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Nihei Mizuhisa
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Awano Yuji
Mirai-selete
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Katagiri Masayuki
Mirai-selete
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YAMAZAKI Yuichi
Low-Power Electronics Association and Project (LEAP)
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WADA Makoto
Low-Power Electronics Association and Project (LEAP)
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KITAMURA Masayuki
Low-Power Electronics Association and Project (LEAP)
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KATAGIRI Masayuki
Low-Power Electronics Association and Project (LEAP)
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ISOBAYASHI Atsunobu
Low-Power Electronics Association and Project (LEAP)
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KAJITA Akihiro
Low-Power Electronics Association and Project (LEAP)
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Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sakuma Naoshi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Mariko
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sakai Tadashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Katagiri Masayuki
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakai Tadashi
Low-power Electronics Association & Project (LEAP), Kawasaki 212-8582, Japan
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Sakuma Naoshi
Low-power Electronics Association & Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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SUZUKI Mariko
Low-Power Electronics Association and Project (LEAP)
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SAKATA Atsuko
Low-Power Electronics Association and Project (LEAP)
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Yamazaki Yuichi
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Ito Ban
Low-power Electronics Association & Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
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Hyakushima Takashi
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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WADA Makoto
Corporate Research and Development Center, Toshiba Corporation
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MATSUNAGA Noriaki
Corporate Research and Development Center, Toshiba Corporation
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Matsunaga Noriaki
Corporate Research And Development Center Toshiba Corporation
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SAKUMA Naoshi
Low-Power Electronics Association and Project (LEAP)
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SAKAI Tadashi
Low-Power Electronics Association and Project (LEAP)
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Nihei Mizuhisa
MIRAI-Selete
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Hyakushima Takashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Matsumoto Takashi
Low-power Electronics Association & Project (LEAP), Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition
- High-Quality Carbon Nanotube Growth at Low Temperature by Pulse-Excited Remote Plasma Chemical Vapor Deposition
- Fabrication and Characterization of Planarized Carbon Nanotube Via Interconnects (Special Issue : Advanced Metallization for ULSI Applications)
- A Study on Electrical Resistance of Carbon Nanotubes and Their Metal Contacts Using Simplified Test Structure (Special Issue : Advanced Metallization for ULSI Applications)
- Low-Temperature Graphene Growth Originating at Crystalline Facets of Catalytic Metal