Awano Y | Fujitsu Ltd. Atsugi Jpn
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概要
関連著者
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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AWANO Yuji
Fujitsu Ltd.
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Sato Shintaro
Mirai-selete
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Kondo Daiyu
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Kondo Daiyu
Department Of Physics Graduate School Of Science Tohoku University
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Sato Shintaro
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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NIHEI Mizuhisa
Fujitsu Limited
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KAWABATA Akio
Fujitsu Limited
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NIHEI Mizuhisa
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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AWANO Yuji
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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HORIBE Masahiro
Fujitsu Limited
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KONDO Daiyu
Fujitsu Limited
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Yokoyama N
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Nihei Mizuhisa
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Awano Yuji
Mirai-selete
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Nihei Mizuhisa
MIRAI-Selete
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Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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Awano Yuji
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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武藤 真三
山梨大学
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KONDO Daiyu
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Muto S
Kek Ibaraki
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Kawabata Akio
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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FUTATSUGI Toshiro
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Sakai Tadashi
Mirai-selete
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Hyakushima Takashi
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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KATAGIRI Masayuki
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SAKUMA Naoshi
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SUZUKI Mariko
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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OHFUTI Mari
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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KAWABATA Akio
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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SATO Shintaro
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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OHFUTI Mari
Fujitsu Limited
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Suzuki Mariko
Mirai-selete
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Ohfuti Mari
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Iwai Taisuke
Waseda Univ. School Of Sci & Eng.
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Sakuma Naoshi
Mirai-selete
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Futatsugi T
Fujitsu Laboratories Ltd.
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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Katagiri Masayuki
Mirai-selete
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SAITO Tatsuro
Low-Power Electronics Association and Project (LEAP)
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Sakuma Naoshi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Mariko
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakai Tadashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Katagiri Masayuki
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Hyakushima Takashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Wirner Christoph
Fujitsu Ltd.:nedo Industrial Technology Researcher
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Wirner Christoph
Fujitsu Ltd.
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NAKAGAWA Tadashi
Electrotechnical Laboratory
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BANDO Hiroshi
Electrotechnical Laboratory
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MUTO Shunichi
Hokkaido University, Faculty of Engineering
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Bando Hiroshi
Elecltrotechnical Laboratory
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NAKAGAWA Takahide
RIKEN
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Nakagawa T
Riken
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NIHEI Mizuhisa
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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SATO Shintaro
Fujitsu Limited
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YOKOYAMA Naoki
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Nakagawa T
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Nihei Mizuhisa
Fujitsu Laboratories Ltd.
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Yamazaki Yuichi
Mirai-selete
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Bando Hiroshi
First Department Of Internal Medicine School Of Medicine The University Of Tokushima
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Kondo Daiyu
Fujitsu Laboratories Ltd.
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Bandou Hiroyuki
Faculty Of Engineering Chiba University
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Yokoyama Naoki
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Yamazaki Yuichi
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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武藤 真三
山梨大学工学部
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Sugawara Mitsuru
Fujitsu Limited And Fujitsu Laboratories Limited
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Sugawara Mitsuru
北海道大学 薬学研究臨床薬剤学
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MUTO Shunichi
Department of Applied Physics, Hokkaido University
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YAMAGUCHI Masaomi
Fujitsu Limited
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OHSHIMA Toshio
Fujitsu Laboratories Ltd.
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SASAKURA Hirotaka
Department of Applied Physics, Faculty of Engineering Hokkaido University
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MIURA Noboru
Institute for Solid State Physics,University of Tokyo
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Yamaguchi Masaomi
Fujitsu Lab. Ltd. Kanagawa Jpn
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Sasakura Hirotaka
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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FUTATSUJI Toshiro
Fujitsu Laboratories
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OHNO Minoru
Institute for Solid State Physics, University of Tokyo
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SAKUMA Yoshiki
Fujitsu limited
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SEKIGUCHI Takashi
Institute for Materials Research, Tohoku University
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MUTO Shunichi
the Faculty of Engineering, Hokkaido University
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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Saito T
Fujitsu Laboratories Limited
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Saito Tamio
Fujitsu Laboratories Ltd
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Ohno Minoru
Institute For Solid State Physics University Of Tokyo
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Takei Fumio
Fujitsu Laboratories Ltd.
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YOKOYAMA Daisuke
Waseda Univ., School of Sci & Eng.
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ISHIMARU Kentaro
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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IWASAKI Takayuki
Waseda Univ., School of Sci & Eng.
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KAWARADA Hiroshi
Waseda Univ., School of Sci & Eng.
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KAWABATA Akio
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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NOZUE Tatsuhiro
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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KONDO Daiyu
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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SHIOYA Hiroki
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
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IWAI Taisuke
Fujitsu Limited
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ASANO Koji
Fujitsu Limited
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Harada N
Fujitsu Ltd. Atsugi Jpn
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Miura N
Univ. Tokyo Tokyo Jpn
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Miura Noboru
Instilute For Solid State Physics University Of Tokyo
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Sugawara Mitsuru
Fujitsu Laboratories Ltd.
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Sugawara M
Fujitsu Laboratories Ltd.
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Soga Ikuo
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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OHASHI Yoji
Fujitsu Laboratories Ltd., Wireless Communication Systems Laboratories
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Oikawa Hideyuki
FUJITSU LABORATORIES LTD.
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Hikosaka K
Fujitsu Lab. Ltd. Kanagawa Jpn
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Nozue Tatsuhiro
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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Saito Tamio
Fujitsu Laboratories Limited
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Sakuma Yoshiki
Fujitsu Laboratories Ltd.
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Sekiguchi Takashi
Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And
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Nakata Y
Fujitsu Laboratories Ltd.
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Yamaguchi Yoshitaka
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Abe Masayuki
Fujitsu Laboratories Ltd.
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Abe Masayuki
Fujitsu Laboratories Limited
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HARADA Naoki
Fujitsu Laboratories Ltd.
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Ohashi Yoji
Fujitsu Laboratories Limited
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Iwai Taisuke
Fujitsu Laboratories Ltd.
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Ohshima T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Sugawara M
Semiconductor Company Sony Corporation
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NORIMATSU Masaaki
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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IWAI Taisuke
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Sekiguchi T
Institute For Materials Research Tohoku Unviersity
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science (nims)
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Sekiguchi Takashi
Department Of Chemistry And Materials Technology Kyoto Institute Of Technology
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science
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Sugawara M
Fujitsu Limited And Fujitsu Laboratories Limited
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WADA Makoto
Corporate Research and Development Center, Toshiba Corporation
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MATSUNAGA Noriaki
Corporate Research and Development Center, Toshiba Corporation
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Oikawa H
Nec Corp. Otsu‐shi Jpn
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Kondo Daiyu
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Shioya Hiroki
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Muto Shinzo
Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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Ishimaru Kentaro
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Norimatsu Masaaki
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Matsunaga Noriaki
Corporate Research And Development Center Toshiba Corporation
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Asano Koji
Fujitsu Laboratories Ltd.
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MIURA Nariaki
Department of Physics, Graduate School of Science, University of Tokyo
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Sekiguchi Takashi
Advanced Nano-characterization Center National Institute For Materials Science
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Sekiguchi Takashi
Institute For Materials Research Tohoku University
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武藤 俊介
名古屋大学
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Yokoyama Daisuke
Waseda Univ. School Of Sci & Eng.
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Kawarada Hiroshi
Waseda Univ. School Of Sci & Eng.
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Saito Takashi
Second Department Of Oral And Maxillofacial Surgery Tsurumi University School Of Dental Medicine
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Nozue Tatsuhiro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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HARADA Naoki
Fujitsu Laboratories Limited
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Sugawara Mitsuru
Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kawabata Akio
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Oikawa Hideyuki
Fujitsu Laboratories Limited
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Muto Shunichi
Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan
著作論文
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Electrical properties of carbon nanotubes grown at a low temperature by radical chemical vapor deposition for future LSI interconnects
- Carbon Nanotube Via Technologies for Advanced Interconnect Integration
- Chemical Modification of Multi-walled Carbon Nanotubes (MWNTs) By Vacuum Ultraviolet (VUV) Irradiation Dry Process
- Carbon Nanotube Growth Technologies Using Tantalum Barrier Layer for Future ULSIs with Cu/Low-k Interconnect Processes
- Diameter-Controlled Growth of Multi-Walled Carbon Nanotubes by Hot-Filament Chemical Vapor Deposition with Ferritin as a Catalyst on a Silicon Substrate
- Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
- Influence of Growth Mode of Carbon Nanotubes on Physical Properties for Multiwalled Carbon Nanotube Films Grown by Catalystic Chemical Vapor Deposition
- Carbon nanotube technologies for future ULSI via interconnects
- Mechanical Polishing Technique for Carbon Nanotube Interconnects in ULSIs
- Simultaneous Formation of Multiwall Carbon Nanotubes and their End-Bonded Ohmic Contacts to Ti Electrodes for Future ULSI Interconnects
- Direct Diameter-Controlled Growth of Multiwall Carbon Nanotubes on Nickel-Silicide Layer
- CNT-FETs with High Modulated Drain Current utilizing Size-classified Fe Particles as a Catalyst
- Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition
- High-Quality Carbon Nanotube Growth at Low Temperature by Pulse-Excited Remote Plasma Chemical Vapor Deposition
- Self-organization of Novel Carbon Composite Structure : Graphene Multi-Layers Combined Perpendicularly with Aligned Carbon Nanotubes
- 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- First-Principles Study of Electronic Properties in Si Lattice Matched SiGeC Alloy with a Low C Concentration